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High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800–850 nm wavelength operation

 

作者: M. S. U¨nlu¨,   M. Go¨kkavas,   B. M. Onat,   E. Ata,   E. O¨zbay,   R. P. Mirin,   K. J. Knopp,   K. A. Bertness,   D. H. Christensen,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 72, issue 21  

页码: 2727-2729

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121073

 

出版商: AIP

 

数据来源: AIP

 

摘要:

High-speed resonant cavity enhanced Schottky photodiodes operating in 800–850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry–Perot cavity. The detectors exhibit a peak quantum efficiency of&eegr;=0.5at&lgr;=827 nmwavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz. ©1998 American Institute of Physics.

 

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