Localization and quantization in silicon inversion Iayers
作者:
M. Pepper,
期刊:
Contemporary Physics
(Taylor Available online 1985)
卷期:
Volume 26,
issue 3
页码: 257-293
ISSN:0010-7514
年代: 1985
DOI:10.1080/00107518508223685
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
A review is presented of two of the many topical areas of interest in two-dimensional transport in silicon inversion layers. The first topic is localization: strong localization in a band tail, and quantum interference and the possible localization of all states in two dimensions. The second topic is the quantum Hall effect which is a manifestation of localization in a strong magnetic field.
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