A CdTe photoconductor array x‐ray detector was grown using molecular beam epitaxy (MBE) on a Si(100) substrate. The temporal response of the photoconductor arrays is as fast as 21 ps rise time and 38 ps full width half‐maximum (FWHM). The spatial resolution of the photoconductor was good enough to provide 75 &mgr;m FWHM using a 50 &mgr;m synchrotron x‐ray beam. A substantial number of x‐ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x‐ray detectors. ©1995 American Institute of Physics.