Phonon mode and electronic bottleneck associated with the nonradiative relaxation in Ni2+‐doped MgO
作者:
S. G. Demos,
B. Y. Han,
R. R. Alfano,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 5
页码: 635-637
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115186
出版商: AIP
数据来源: AIP
摘要:
The up‐converted hot luminescence technique was utilized to obtain information on the nonradiative relaxation in Ni2+:MgO. The experiment shows the presence of an electronic bottleneck associated with the3T1(t4e4) electronic state which was determined to be at 2.973±0.003 eV (23978±25 cm−1). The spectral profiles indicate that the 395±15 cm−1phonon mode is involved in the nonradiative relaxation of the impurity Ni2+ions. ©1995 American Institute of Physics.
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