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Phonon mode and electronic bottleneck associated with the nonradiative relaxation in Ni2+‐doped MgO

 

作者: S. G. Demos,   B. Y. Han,   R. R. Alfano,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 67, issue 5  

页码: 635-637

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.115186

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The up‐converted hot luminescence technique was utilized to obtain information on the nonradiative relaxation in Ni2+:MgO. The experiment shows the presence of an electronic bottleneck associated with the3T1(t4e4) electronic state which was determined to be at 2.973±0.003 eV (23978±25 cm−1). The spectral profiles indicate that the 395±15 cm−1phonon mode is involved in the nonradiative relaxation of the impurity Ni2+ions. ©1995 American Institute of Physics.

 

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