A T‐shaped field‐effect transistor, made out of a pair of two‐dimensional electron gases, is modeled and studied. A simple numerical model is developed to study the electron distribution versus applied gate voltage for different gate lengths. The model is then improved to account for depletion and the width of the two‐dimensional electron gases. The results are then compared to the experimental ones and to some approximate analytical calculations and are found to be in good agreement with them. ©1995 American Institute of Physics.