The effects of strong electric fields, up to 4×105V/cm, on the electron emission from the GaAs dominant midgap levels EL2 and EL0 were investigated by employing differential capacitance transients on GaAs‐Au Schottky diodes. It was found that, in diodes with normal reverse bias characteristics, both levels exhibited a small field enhancement of electron emission, well within the range of the Poole–Frenkel effect. In contrast, very pronounced ‘‘apparent’’ electric field effects were observed in diodes with large reverse bias current. Thus, the conflicting reported results on the magnitude of the field enhancement of the electron emission from EL2 must be attributed to the characteristics of the Schottky diodes employed rather than to those of EL2.