Spiral growth of GaSb on (001) GaAs using molecular beam epitaxy
作者:
Berinder Brar,
Devin Leonard,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 4
页码: 463-465
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114057
出版商: AIP
数据来源: AIP
摘要:
Atomic force microscopy is employed to obtain images of the surface of GaSb epilayers grown on (001) GaAs using molecular beam epitaxy. The images reveal a surface that consists of micron size mounds that are approximately 4 nm high. A stepped surface is clearly observed on the mounds with a single step edge that originates from a screw dislocation at the center of the mound and moves out to the edge in a spiral fashion. The surface structure of the spiral mounds is observed to depend on the growth temperature of the GaSb epilayer, presumably as a result of a shorter diffusion length of the group III adatoms for lower substrate temperatures. ©1995 American Institute of Physics.
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