Noncontact semiconductor wafer characterization with the terahertz Hall effect
作者:
D. M. Mittleman,
J. Cunningham,
M. C. Nuss,
M. Geva,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 1
页码: 16-18
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119456
出版商: AIP
数据来源: AIP
摘要:
We demonstrate noncontact measurements of the Hall mobility of doped semiconductor wafers with roughly 250 &mgr;m spatial resolution, using polarization rotation of focused beams of terahertz (THz) radiation in the presence of a static magnetic field. Quantitative and independent images of both carrier density and mobility of a doped semiconductor wafer have been obtained. ©1997 American Institute of Physics.
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