Rh/n‐GaAs contacts with and without sulfur passivation
作者:
G. Eftekhari,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 6
页码: 3596-3598
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588732
出版商: American Vacuum Society
关键词: Rh;GaAs
数据来源: AIP
摘要:
The Rh/n‐GaAs contacts with and without sulfur passivation were examined. It was demonstrated that passivation results in contacts of better quality and improved thermal stability. The passivated contacts had higher barrier height, lower reverse current, and lower ideality factor. The formation of thermally stable S–S, S–Ga, and S–As bonds at the GaAs surface, suppression of thermally generated defects, and possible modification in the charge and structure of native oxide were used to explain the observations.
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