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Direct Observation of Dislocations in Silicon Web Crystals

 

作者: E. D. Jungbluth,  

 

期刊: Journal of Applied Physics  (AIP Available online 1965)
卷期: Volume 36, issue 10  

页码: 3112-3115

 

ISSN:0021-8979

 

年代: 1965

 

DOI:10.1063/1.1702933

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Dislocations in web silicon have been observed by x‐ray diffraction microscopy. Numerous sources of dislocations originate in the dendrite and form low‐angle grain boundaries within the web. Dislocations propagating along the growth direction have [01¯1] and [101] or [110] Burgers vectors, and dislocations aligned along the [11¯0] and [101¯] directions are product dislocations of a Lomer‐Cottrell reaction. Interactions between the two sets of dislocations are often observed.

 

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