Transmission electron microscope study of the formation of Ni2Si and NiSi on amorphous silicon
作者:
M. O. Aboelfotoh,
H. M. Tawancy,
F. M. d’Heurle,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 20
页码: 1453-1454
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97799
出版商: AIP
数据来源: AIP
摘要:
The reaction of very thin (0.5–20 nm) layers of Ni with amorphous Si has been investigated by means of transmission electron microscopy and diffraction. The experiment, which is directly parallel to a previous study of similar samples prepared with Pd and Pt, has led to different observations. With Ni it is found that an amorphous Ni‐Si solution is formed first, and that silicide formation, at temperatures which decrease with the amount of deposited Ni, results from the crystallization of that amorphous phase. With Pt and Pd microcrystalline silicides had been observed immediately.
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