Femtosecond carrier dynamics in GaAs
作者:
W. Z. Lin,
L. G. Fujimoto,
E. P. Ippen,
R. A. Logan,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 3
页码: 124-126
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97691
出版商: AIP
数据来源: AIP
摘要:
Femtosecond carrier dynamics in GaAs and Al0.3Ga0.7As are investigated using pump probe measurements of transient absorption saturation. Pulses of 35 fs duration are used both to excite carriers and to investigate their subsequent scattering out of their initial optically excited states. A two‐component ultrafast relaxation is observed. In GaAs the initial rapid relaxation occurs on a time scale of 10–35 fs. Measurements performed in Al0.3Ga0.7As indicate that this initial process slows significantly to 130–170 fs for increasing band gap.
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