Recombination mechanism and carrier lifetimes of semi‐insulating GaAs:Cr
作者:
M. J. Papastamatiou,
G. J. Papaioannou,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 3
页码: 1094-1098
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346749
出版商: AIP
数据来源: AIP
摘要:
The recombination process has been investigated in semi‐insulating GaAs Cr. The theoretical model was based on the Shockley–Read statistics considering two traps, the HL1 (Cr) and EL2, respectively. The trap concentrations and the carrier lifetimes have been determined from the dependence of both the photomagnetoelectric effect short‐circuit current and the photoconductance on the illumination intensity.
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