Low threshold and high power output 1.5 &mgr;m InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy
作者:
W. T. Tsang,
M. C. Wu,
T. Tanbun‐Ek,
R. A. Logan,
S. N. G. Chu,
A. M. Sergent,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 20
页码: 2065-2067
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103942
出版商: AIP
数据来源: AIP
摘要:
We have demonstrated the first successful preparation of InGaAs/InGaAsP multiple quantum well (MQW) lasers grown by chemical beam epitaxy. The broad‐area threshold current densities of standard (not graded index) separate confinement heterostructure (SCH) MQW lasers were as low as 860 and ∼590 A/cm2for cavity lengths of 500 and 1500–3500 &mgr;m. Such values are similar to those obtained from MQW wafers employing the more advanced graded index SCH(GRIN‐SCH) grown by metalorganic vapor phase epitaxy. Buried‐heterostructure lasers also have similar threshold currents, i.e., 25–40 mA for 300–1500 long cavities. Pulsed and cw output power at 1.57 &mgr;m as high as 216 and 140 mW were obtained from 1‐mm‐long buried‐heterostructure lasers having antireflection and high reflection coatings of ∼5% and ∼85%. The layer thickness uniformity is better than ±1% across a 2‐in.‐diam wafer.
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