Thermally converted surface layers in semi‐insulating GaAs
作者:
W. Y. Lum,
H. H. Wieder,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 31,
issue 3
页码: 213-215
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89610
出版商: AIP
数据来源: AIP
摘要:
Charge carrier transport in thermally converted surface layers in semi‐insulating GaAs depends on the generation, diffusion, and occupancy of Ga and As vacancies. The amphoteric nature of C in GaAs can significantly alter the density and the distribution of donors and acceptors in the vicinity of the specimen surface and the surface layer may become eitherptype orntype depending on the thermal treatment conditions.
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