Continuous single‐crystal Si sheets over SiO2with areas of several square centimeters have been produced from poly‐Si films by the LESS technique (lateral epitaxy by seeded solidification). Seeding is achieved either with a narrow stripe opening in a recessed SiO2layer on a single‐crystal Si substrate or with an external single‐crystal Si seed.N‐channel metal‐oxide‐semiconductor field‐effect transistors (MOSFET’s) fabricated in these films exhibit surface electron mobilities as high as 700 cm2/V s.