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Effects of Au on NiGe(Au)W ohmic contacts ton‐GaAs

 

作者: Naftali Lustig,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1992)
卷期: Volume 10, issue 3  

页码: 1224-1225

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.585893

 

出版商: American Vacuum Society

 

关键词: LAYERED MATERIALS;GOLD;NICKEL;GERMANIUM;TUNGSTEN;GALLIUM ARSENIDES;OHMIC CONTACTS;STABILITY;ELECTRIC CONDUCTIVITY;VLSI;(NiGeW):Au;GaAs

 

数据来源: AIP

 

摘要:

The contact resistance and thermal stability of NiGe(Au)W ohmic contacts are reported as a function of their Au content. The contact resistance, measured by the transmission line method, is found to decrease monotonically from a maximum of ∼0.8 Ω mm for the Au‐free NiGeW contacts, to less than 0.15 Ω mm for NiGe(Au)W containing ∼60 Å of Au. The low Au content contacts are also found to be more stable than their Au‐free counterparts when stressed at 400 °C for a number of hours. Possible mechanisms to explain these results are proposed.

 

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