Effects of Au on NiGe(Au)W ohmic contacts ton‐GaAs
作者:
Naftali Lustig,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 3
页码: 1224-1225
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.585893
出版商: American Vacuum Society
关键词: LAYERED MATERIALS;GOLD;NICKEL;GERMANIUM;TUNGSTEN;GALLIUM ARSENIDES;OHMIC CONTACTS;STABILITY;ELECTRIC CONDUCTIVITY;VLSI;(NiGeW):Au;GaAs
数据来源: AIP
摘要:
The contact resistance and thermal stability of NiGe(Au)W ohmic contacts are reported as a function of their Au content. The contact resistance, measured by the transmission line method, is found to decrease monotonically from a maximum of ∼0.8 Ω mm for the Au‐free NiGeW contacts, to less than 0.15 Ω mm for NiGe(Au)W containing ∼60 Å of Au. The low Au content contacts are also found to be more stable than their Au‐free counterparts when stressed at 400 °C for a number of hours. Possible mechanisms to explain these results are proposed.
点击下载:
PDF
(236KB)
返 回