Positron annihilation studies of silicon-richSiO2produced by high dose ion implantation
作者:
G. Ghislotti,
B. Nielsen,
P. Asoka-Kumar,
K. G. Lynn,
L. F. Di Mauro,
F. Corni,
R. Tonini,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 4
页码: 496-498
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118315
出版商: AIP
数据来源: AIP
摘要:
Positron annihilation spectroscopy (PAS) is used to study Si-rich SiO2samples prepared by implantation of Si (160 keV) ions at doses in the range 3×1016–3×1017cm−2and subsequent thermal annealing at high temperature (up to 1100 °C). Samples implanted at doses higher than 5×1016cm−2and annealed above 1000 °C showed a PAS spectrum with an annihilation peak broader than the unimplanted sample. We discuss how these results are related to the process of silicon precipitation inside SiO2.©1997 American Institute of Physics.
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