It is shown that the apparent doping profile obtained from a1/CHF2 vs Vplot (whereCHFis the high‐frequency MOS capacitance andVis the voltage across the capacitor) can be corrected for interface‐state effects to obtain a more accurate doping profile. This more accurate doping density,N(w), at distancewfrom the semiconductor‐insulator interface is related to the uncorrected density,N0(w), obtained by neglecting interface states, byN(w)=N0(w) (1−CLF/Cox) (1−CHF/Cox)−1, whereCLFis the quasistatic MOS capacitance at the voltage corresponding to the depletion widthwandCoxis the oxide capacitance. This scheme is shown to provide the doping profile to within 5% accuracy for distances from three extrinsic Debye lengths out to the maximum depletion width obtainable in thermal equilibrium. Experimental verification of this method is obtained by measuring the doping profile on a single capacitor before and after bias‐temperature stress. The same doping profile is obtained in both cases despite a large change in interface‐state density.