Mechanism of particle formation in the sputtering and reactive ion etching of Si and SiO2
作者:
Won Jong Yoo,
Christoph Steinbrüchel,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 4
页码: 2758-2762
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587188
出版商: American Vacuum Society
关键词: SILICON;SILICON OXIDES;ETCHING;SPUTTERING;PLASMA JETS;PARTICLES;ION BEAMS;NUCLEATION;LIGHT SCATTERING;Si;SiO2
数据来源: AIP
摘要:
Particle formation from Si and SiO2substrates in Ar sputtering plasmas and CCl2F2/Ar reactive ion etching (RIE) plasmas has been investigated using laser light scattering, electron microscopy, and optical emission spectroscopy. Nearly spherical particles with sizes down to 50 nm are collected downstream from the substrate even before the onset of light scattering or at pressures below the threshold for cloud formation. Si atoms are seen readily by optical emission during sputtering, but not during RIE, of both Si and SiO2. The rate of particle formation correlates with the density of Si atoms in the plasma. Hence, it is suggested that Si atoms are probably the species responsible for particle nucleation in sputtering and RIE, and formation of a particle cloud occurs only when the transport of Si atoms out of the sheath edge region becomes inefficient, as evidenced by redeposition in sputtering and by polymerization in RIE.
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