Behavior of oxygen in the crystal formation and heat treatment of silicon heavily doped with antimony
作者:
Tadashi Nozaki,
Yoshiko Itoh,
Tsumoru Masui,
Takao Abe,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 59,
issue 7
页码: 2562-2565
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337005
出版商: AIP
数据来源: AIP
摘要:
Using charged particle activation analysis, oxygen concentration in silicon crystals heavily doped with antimony has been shown to be considerably lower than in undoped crystals grown under otherwise the same conditions. The difficulty of oxygen precipitation in these doped crystals is therefore due to the lowered oxygen concentration and also to the difference in the dopant effect on precipitate formation.
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