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Schottky diodes using poly(3‐hexylthiophene)

 

作者: C. S. Kuo,   F. G. Wakim,   S. K. Sengupta,   S. K. Tripathy,  

 

期刊: Journal of Applied Physics  （AIP Available online 1993）
卷期: Volume 74, issue 4  

页码: 2957-2958

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.355319

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Schottky barrier diodes have been fabricated using poly(3‐hexylthiophene)(P3HT) as the semiconductor and indium as the metal. P3HT was doped with FeCl3at room temperature to form ap‐type semiconductor. The Schottky junctions of In on FeCl3‐doped P3HT using pressure contact exhibit rectification ratios ranging from 104:1 to 106:1 at a bias of ±1 V.

 

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