Discussion on ``Comment on `Habit and morphology of copper precipitates in silicon'''
作者:
S. M. Hu,
M. R. Poponiak,
期刊:
Journal of Applied Physics
(AIP Available online 1973)
卷期:
Volume 44,
issue 5
页码: 2416-2416
ISSN:0021-8979
年代: 1973
DOI:10.1063/1.1662578
出版商: AIP
数据来源: AIP
摘要:
The dislocation climb mechanism for the growth and morphology of copper precipitates in silicon, as proposed by Fiermans and Vennik, is questioned on a number of points. In particular, the regularity of the geometry of precipitate colonies, the variation in precipitate density within a colony, and the different morphologies of precipitates of various interstitial impurities in silicon are cited against the suitability of the mechanism.
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