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A structure for measuring contact resistances immediately following metal deposition

 

作者: John R. Schlais,   Gerold W. Neudeck,   S. T. Liu,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 2  

页码: 579-581

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584403

 

出版商: American Vacuum Society

 

关键词: METALLIZATION;SILICON;MIXING;ALUMINIUM;INTEGRATED CIRCUITS;CONTACT POTENTIAL;ELECTRIC CONDUCTIVITY;MEASURING METHODS;SILICA;ANNEALING;MASKING;LITHOGRAPHY;ETCHING;METAL−SEMICONDUCTOR CONTACTS;Si;Al

 

数据来源: AIP

 

摘要:

A new method of preparing prepatterned contact resistance monitor wafers is presented that requires only two mask steps. After metalization, no masking, photolithography, or etching steps are needed to produce the three terminal structure. Because there is no photoresist bake, no Al–Si intermixing occurs and the wafer batch can be reclaimed prior to annealing if poor contacts were formed. The technique uses a standard low‐pressure epitaxial reactor to perform the selective silicon etching, leaving a SiO2overhang pattern to define the metal.

 

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