Determination of crystallite propagation in laser annealed amorphous silicon by normal incidence spectral reflectance
作者:
G. Williams,
D. Sands,
R. M. Geatches,
K. J. Reeson,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 11
页码: 1623-1625
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117051
出版商: AIP
数据来源: AIP
摘要:
Analysis of normal incidence spectral reflectivity of excimer laser annealed &agr;‐Si:H shows that the annealed material can be modeled as a stratified system comprising a large‐grained polycrystalline layer, a fine grained polycrystalline layer, and residual amorphous silicon in agreement with transmission electron microscopy. Optically, the large‐grained poly‐Si behaves as single‐crystal silicon and the fine‐grained material is modeled, using effective medium theory, as a mixture of single‐crystal silicon and amorphous silicon. ©1996 American Institute of Physics.
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