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Determination of crystallite propagation in laser annealed amorphous silicon by normal incidence spectral reflectance

 

作者: G. Williams,   D. Sands,   R. M. Geatches,   K. J. Reeson,  

 

期刊: Applied Physics Letters  (AIP Available online 1996)
卷期: Volume 69, issue 11  

页码: 1623-1625

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.117051

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Analysis of normal incidence spectral reflectivity of excimer laser annealed &agr;‐Si:H shows that the annealed material can be modeled as a stratified system comprising a large‐grained polycrystalline layer, a fine grained polycrystalline layer, and residual amorphous silicon in agreement with transmission electron microscopy. Optically, the large‐grained poly‐Si behaves as single‐crystal silicon and the fine‐grained material is modeled, using effective medium theory, as a mixture of single‐crystal silicon and amorphous silicon. ©1996 American Institute of Physics.

 

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