p‐nGa0.65In0.35P homostructure light‐emitting diodes grown on GaAs0.7P0.3substrates have been fabricated by low‐pressure metalorganic vapor‐phase epitaxy. The growth and characterization of undoped, Si‐, and Zn‐doped layers are described in detail. The optimum growth condition to grow the high‐quality Ga0.65In0.35P epitaxial layers is at the growth temperatures of 700–740 °C and V/III ratios of 100–200. The strongest photoluminescence peak intensity occurs at 2×1018and 7×1017cm−3for electron and hole concentrations, respectively. Diodes fabricated from thep‐nhomostructure are characterized by current‐voltage measurement, electroluminescence, and external quantum efficiency. A forward‐bias turn‐on voltage of 1.68 V with an ideality factor of 2.5 and a breakdown voltage of 9 V are obtained from the current‐voltage measurements. The emission peak wavelength and full width at half‐maximum of electroluminescence are around 610 nm and 79 meV at 20 mA. The external quantum efficiency of the uncoated diode is about 0.015%.