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Si(111)2×1 by XPS

 

作者: D. M. Poirier,   J. H. Weaver,  

 

期刊: Surface Science Spectra  （AIP Available online 1993）
卷期: Volume 2, issue 3  

页码: 195-200

 

ISSN:1055-5269

 

年代: 1993

 

DOI:10.1116/1.1247699

 

出版商: American Vacuum Society

 

关键词: SILICON;SURFACES;PHOTOELECTRON SPECTROSCOPY;CLEAVAGE;VALENCE BANDS;MONOCRYSTALS;X RADIATION

 

数据来源: AIP

 

摘要:

XPS spectra were recorded for the (111) cleavage surface of Si. For comparison, one surface was cleavedinsitu(Accession #00099) and a second was cleaved in air and exposed for 90 min before it was inserted into the vacuum chamber (Accession #00100). Si 2p, 2s, and valence band spectra are included.

 

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