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Computer-aided design of multilayer-structure Ga1-xAIxAS-GaAs Solar cells

 

作者: AkiraUsami,   YoshihikoHamamoto,  

 

期刊: IEE Journal on Solid-State and Electron Devices  (IET Available online 1977)
卷期: Volume 1, issue 6  

页码: 182-184

 

年代: 1977

 

DOI:10.1049/ij-ssed.1977.0028

 

出版商: IEE

 

数据来源: IET

 

摘要:

The spectral response, the voltage and current that give maximum power, and the conversion efficiency have all been calculated for Ga1-xAlxAs/p-GaAs/n-GaAs solar cells that have multilayer GaAlAs windows on their surfaces. In the numerical analysis, photo-generated carrier collection in the window layers was considered. The spectral response in the short-wavelength region could be improved if either the Al composition factorxof the window layer was made larger or the window was made thinner. The lifetime of the carriers in thep-GaAs layer is especially important for improving the spectral response and the conversion efficiency. The increases of donor concentration in then-GaAs bulk region and of acceptor concentration in thep-GaAs layer cause the current and voltage to increase. Thus the multilayer structures can make efficient use of the short-wavelength region of the spectrum and be easier to produce than a continuously graded structure. Conversion efficiencies can be approximately 20% in AMO.

 

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