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Position‐sensitive photodetector based on hydrogenated amorphous siliconp‐i‐njunctions

 

作者: V. A. Chumak,   M. Bertolotti,   A. Ferrari,   F. Bartoloni,   F. Evangelisti,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1987）
卷期: Volume 58, issue 2  

页码: 202-206

 

ISSN:0034-6748

 

年代: 1987

 

DOI:10.1063/1.1139307

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A position‐sensitive photodetector is discussed using the transverse photoeffect and a particular geometry in a hydrogenated amorphous silicon (a‐Si:H) junction. A comparison with a more conventional device using the lateral photoeffect ina‐Si:H is made and it is shown that the new device has better characteristics.

 

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