InGaP/GaAs single quantum well structure growth on GaAs facet walls by chloride atomic layer epitaxy
作者:
Akira Usui,
Haruo Sunakawa,
Frank J. Stu¨tzler,
Koichi Ishida,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 3
页码: 289-291
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102811
出版商: AIP
数据来源: AIP
摘要:
InGaP/GaAs single quantum well(SQW) structure growth on GaAs facet wall is achieved by atomic layer epitaxy (ALE) using chloride source gases, such as InCl and GaCl. GaAs facets are formed on GaAs(100) surface openings by conventional hydride vapor phase epitaxy, which have {011} sidewalls perpendicular to the surface, {111}Band (100) faces. ALE growth of SQWs onto these faces results in a very smooth and uniform surface, as shown by scanning electron microscopy observation and cathodoluminescence measurements. The self‐limiting mechanism for ALE is also retained in such selective sidewall growth of heterostructures.
点击下载:
PDF
(339KB)
返 回