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Via hole filling with gold melting by KrF excimer laser irradiation

 

作者: W. Spiess,   H. Strack,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 1  

页码: 127-128

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584435

 

出版商: American Vacuum Society

 

关键词: GOLD;LASER BEAM MELTING;SILICA;HOLES;CAVITIES;CHROMIUM;INTEGRATED CIRCUITS;KRYPTON FLUORIDES;THICKNESS;FABRICATION;Au

 

数据来源: AIP

 

摘要:

One pulse of a KrF excimer laser emitting radiation at a wavelength of 248 nm was used to completely fill via holes in silicon dioxide (diameter: 2 μm, depth: 1 μm) by melting a 600‐nm‐thick gold layer on a 100‐nm‐thick Cr adhesion layer. The pulse width was 23 ns full width at half‐maximum (FWHM) and the pulse energy was 160 mJ, yielding a laser fluence at sample surface of ∼0.6 J/cm2. The result is a nearly planar structure.

 

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