Spectral response of Schottky diodes on hydrogenated amorphous silicon: Effects of gap states
作者:
E. Arene,
J. Baixeras,
Ch. Longeaud,
期刊:
Journal of Applied Physics
(AIP Available online 1982)
卷期:
Volume 53,
issue 6
页码: 4531-4533
ISSN:0021-8979
年代: 1982
DOI:10.1063/1.331197
出版商: AIP
数据来源: AIP
摘要:
The spectral response of Schottky diodes on hydrogenated amorphous silicon has been determined between 1 and 3.5 eV. An anomalous absorption peak clearly appears at low energy from these experiments. We have demonstrated that this peak is due to optical transitions from localized states near the valence band to the conduction band, and is connected with hole trapping during the transport.
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