Effects of carrier mass differences on the current‐voltage characteristics of resonant tunneling structures
作者:
H. Ohno,
E. E. Mendez,
W. I. Wang,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 18
页码: 1793-1795
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103102
出版商: AIP
数据来源: AIP
摘要:
We show that the current‐voltage characteristics of resonant tunneling structures are drastically influenced by the difference of electronic effective masses between the electrodes and the quantum well. In particular, if the mass in the well is larger than that in the emitter, the current peak is shifted to lower voltages, relative to the more conventional case of equal masses. This situation is illustrated experimentally with GaAs/AlAs/GaAs heterostructures, in which &Ggr; electrons emitted from GaAs tunnel resonantly through the AlAsXpoint, where the mass is considerably heavier.
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