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Effects of carrier mass differences on the current‐voltage characteristics of resonant tunneling structures

 

作者: H. Ohno,   E. E. Mendez,   W. I. Wang,  

 

期刊: Applied Physics Letters  (AIP Available online 1990)
卷期: Volume 56, issue 18  

页码: 1793-1795

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103102

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We show that the current‐voltage characteristics of resonant tunneling structures are drastically influenced by the difference of electronic effective masses between the electrodes and the quantum well. In particular, if the mass in the well is larger than that in the emitter, the current peak is shifted to lower voltages, relative to the more conventional case of equal masses. This situation is illustrated experimentally with GaAs/AlAs/GaAs heterostructures, in which &Ggr; electrons emitted from GaAs tunnel resonantly through the AlAsXpoint, where the mass is considerably heavier.

 

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