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High‐Temperature Electrical Resistivity and Allotropic Transformation Temperature of Hafnium

 

作者: Ray G. Bedford,  

 

期刊: Journal of Applied Physics  (AIP Available online 1965)
卷期: Volume 36, issue 1  

页码: 113-117

 

ISSN:0021-8979

 

年代: 1965

 

DOI:10.1063/1.1713855

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The electrical resistivity of a Hf filament containing 4.9 at. % Zr was measured in the temperature interval from 1155° to 2250°K. The resistivity increases from 37 &mgr;&OHgr;‐cm at room‐temperature to 187 &mgr;&OHgr;‐cm at 2025°K where the alloy undergoes a transition from an hcp to a bcc structure with a corresponding decrease in resistivity to 173 &mgr;&OHgr;‐cm. From data in the literature the transition temperature of pure Hf is estimated to be 2030°±30°K. Graphs of total emissivity versus temperature indicate that changes in the surface characteristics of the sample occurred during the measurements. After surface conditions became constant, the total hemispherical emissivity increased linearly with temperature from about 0.26 at 1200°K to 0.31 at 2000°K.

 

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