Convergent-beam electron diffraction study of Ge0·5Si0·5/Si strained-layer superlattices grown by molecular beam epitaxy
作者:
X.F. Duan†,
K.K. Fung†‡,
Y.M. Chu†§,
C. Sheng∥,
G.L. Zhou∥,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1991)
卷期:
Volume 63,
issue 2
页码: 79-85
ISSN:0950-0839
年代: 1991
DOI:10.1080/09500839108201963
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Side bands due to purely composition and combined composition-strain modulation in plan-view specimens of a nominally Ge0·5Si0·5(Snm)/Si(25nm) superlattice have been obtained by large-angle convergent-beam electron diffraction. The intensities of the side bands have been calculated from a periodic tension-compression model of the superlattice bilayer using the kinematical theory of electron diffraction. Accurate values of elastic strains in the bilayer and of the Ge content can be obtained in this way.
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