首页   按字顺浏览 期刊浏览 卷期浏览 Resistance standard using quantization of the Hall resistance of GaAs‐AlxGa1&min...
Resistance standard using quantization of the Hall resistance of GaAs‐AlxGa1−xAs heterostructures

 

作者: D. C. Tsui,   A. C. Gossard,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 38, issue 7  

页码: 550-552

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92408

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Quantization of the Hall resistance of the two‐dimensional electron gas in GaAs‐AlxGa1−xAs heterostructures is observed at 4.2 K and at magnetic fields as low as 4.2 T. This demonstrates its practical use as a primary resistance standard.

 

点击下载:  PDF (251KB)



返 回