The kinetics of the anodic oxidation of crystallinen‐type (100) silicon have been studied under room temperature conditions and in darkness. The initial stages of the oxidation process show an island‐type growth until the islands coalesce forming the oxide. The resulting films have been characterized by capacitance measurements, Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), and infrared absorption spectroscopy (IR). Relevant parameters of the oxidation process such as the electric field of formation and the current efficiency were obtained. Combined NRA and IR analysis show a correlation between the Si–O bond absorption peak and the oxygen content of the SiO2films.