Distribution of intermediate oxidation states at the silicon/silicon dioxide interface obtained by low‐energy ion implantation
作者:
O. Benkherourou,
J. P. Deville,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1988)
卷期:
Volume 6,
issue 6
页码: 3125-3129
ISSN:0734-2101
年代: 1988
DOI:10.1116/1.575486
出版商: American Vacuum Society
关键词: OXIDATION;INTERFACE STATES;SILICON;SILICA;ION IMPLANTATION;INTERFACE STRUCTURE;AMORPHOUS STATE;CRYSTAL STRUCTURE;SiO2;(Si,O)
数据来源: AIP
摘要:
This work has been undertaken to understand the morphology of Si/SiO2interfaces obtained by low‐energy ion implantation. The crystallinity of the interface is determined by the observation of tetrahedral configurations [Si–(Si4−x–Ox) withx=0, 1,...,4] of silicon atoms bound to oxygen and/or silicon. The distribution over the whole interface also has been considered and the amorphous dioxide has been characterized by its interfacial depth and compared with the theoretical models such as the random bonding model or the random mixture model.
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