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Criteria for Si quantum‐well luminescence

 

作者: Shang Yuan Ren,   John D. Dow,   Jun Shen,  

 

期刊: Journal of Applied Physics  （AIP Available online 1993）
卷期: Volume 73, issue 12  

页码: 8458-8462

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.353419

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Criteria are developed for selecting a barrier materialXYsuch that Si/XYsuperlattices should emit light from their Si quantum wells. GaAs is such a material for [001] superlattices. In many such superlattices, substitutional N on a Si site will be a shallow donor, not a deep trap.

 

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