Fabrication of all‐optical quantum well bistable microresonators by reactive ion etching
作者:
T. Rivera,
A. Izraël,
R. Azoulay,
R. Kuszelewicz,
J. F. Bresse,
J. L. Oudar,
F. R. Ladan,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 2
页码: 268-272
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588362
出版商: American Vacuum Society
关键词: TERNARY COMPOUNDS;ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;INTEGRATED OPTICS;OPTICAL BISTABILITY;RESONATORS;FABRY−PEROT INTERFEROMETER;QUANTUM WELLS;FABRICATION;CVD;ETCHING
数据来源: AIP
摘要:
Arrays of all‐optical bistable devices have been fabricated by reactive ion etching (RIE). The vertical Fabry–Pérot structures grown by organometallic vapor‐phase epitaxy include GaAs/Ga0.7Al0.3As multiple quantum wells and AlAs/Ga0.9Al0.1As Bragg reflectors and exhibit optical bistability under moderately focused laser excitation (10–30 μm spot diameter). After RIE, the arrays show a reduced bistability threshold of 70 μW on 4 μm diameter and 5.7 μm high microresonators. This suggests that surface recombination does not play a significant role. This and the absence of degradation of the etched AlAs layers for more than 10 months indicate a self‐passivation of the vertical surfaces during the etching process. Selective plasma etching reveals the presence of a thin cylindrical film clearly visible with a scanning electron microscope. The composition of this film is analyzed by Auger spectroscopy.
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