Internal quantum efficiency of thin epitaxial silicon solar cells
作者:
Rolf Brendel,
Miche`le Hirsch,
Michael Stemmer,
Uwe Rau,
Ju¨rgen H. Werner,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 10
页码: 1261-1263
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113256
出版商: AIP
数据来源: AIP
摘要:
A new theoretical expression is derived for the internal quantum efficiency of solar cells homoepitaxially grown on highly doped monocrystalline substrates. This expression is used to characterize our thin‐layer silicon cells grown by chemical vapor deposition. These cells reach a confirmed efficiency of 17.3% although the active layer thickness is only 48 &mgr;m. The internal quantum efficiency analysis demonstrates that the open circuit voltage is limited by carrier injection into the highly doped substrate. Carrier generation in the substrates accounts for 0.7% of the short circuit current. ©1995 American Institute of Physics.
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