Tungsten deposition on GaAs using WF6and atomic hydrogen
作者:
A. J. P. van Maaren,
W. C. Sinke,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 73,
issue 4
页码: 1989-1992
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.353164
出版商: AIP
数据来源: AIP
摘要:
Tungsten was deposited on GaAs employing WF6as precursor gas. A comparison is made between molecular and atomic hydrogen as reducing agent. Atomic hydrogen is producedinsituby dissociating molecular hydrogen on a hot (2100 °C) filament. Tungsten deposition was not observed only when molecular hydrogen and the substrate were available as reducing agents. Introduction of atomic hydrogen did lead to W deposition on GaAs.
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