1/fnoise in gate‐controlled implanted resistors
作者:
K. Amberiadis,
A. van der Ziel,
L. M. Rucker,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 11
页码: 6989-6990
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.328663
出版商: AIP
数据来源: AIP
摘要:
We measured 1/fnoise in gate‐controlledp‐type implanted resistors in which the surface could be brought from accumulation to strong inversion. The noise increased by a factor of 150 when the surface was brought from accumulation to strong inversion. The results indicate strongly that the noise is due to the interaction of electrons in the inversion layer with the surface oxide. This gives rise to a fluctuating surface potential which in turn give a 1/fmodulation of the surface mobility.
点击下载:
PDF
(91KB)
返 回