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Extended growth of subgrain‐boundary‐free silicon‐on‐insulator via thermal gradient variation

 

作者: El‐Hang Lee,  

 

期刊: Applied Physics Letters  (AIP Available online 1984)
卷期: Volume 44, issue 10  

页码: 959-961

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94610

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Morphological variations of graphite strip heater recrystallized silicon‐on‐insulator formed in the initial stage of seeded growth have been analyzed to examine the thermal gradient effect upon the growth stability. Systematic transition of the stable growth into an orderly breakdown of faceted, cellular, and dendritic configurations has been attributed to the decreasing temperature gradient in this region. There are indications that constitutional supercooling could be responsible for the interface stability breakdown and that increased thermal gradients can suppress the onset of breakdown and maintain the stable growth over an extended distance.

 

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