Gettering of Fe impurities by bulk stacking faults in Czochralski-grown silicon
作者:
B. Shen,
X. Y. Zhang,
K. Yang,
P. Chen,
R. Zhang,
Y. Shi,
Y. D. Zheng,
T. Sekiguchi,
K. Sumino,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 14
页码: 1876-1878
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118718
出版商: AIP
数据来源: AIP
摘要:
Gettering of Fe impurities by bulk stacking faults in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current technique and transmission electron microscopy. It is found that Fe impurities only precipitate on Frank partial dislocations bounding stacking faults when the specimen is cooled slowly; however, both Frank partials and fault planes are decorated by Fe impurities when the specimen is cooled rapidly. It is explained that small oxygen precipitates on fault planes serve as the gettering centers for Fe impurities in the fast cooled specimen. ©1997 American Institute of Physics.
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