Field‐effect Hall mobility studies were made on polycrystallinen‐type InSb films. The intergrain barrier potential is found to be dependent on both temperature and applied gate field. The experimental results fit well with an intergrain barrier potential of the form &fgr;b= &fgr;0(1+&agr;T)(1+&agr;q+bq2), where &fgr;0is the value of &fgr;bat zero gate field and absolute zero temperature, &agr; is the temperature coefficient of &fgr;b, andaandbare constants.