Spatially resolved cathodoluminescence spectra of InGaN quantum wells
作者:
Shigefusa Chichibu,
Kazumi Wada,
Shuji Nakamura,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 16
页码: 2346-2348
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120025
出版商: AIP
数据来源: AIP
摘要:
Spatially resolved cathodoluminescence (CL) spectrum mapping revealed a strong exciton localization in InGaN single-quantum-wells (SQWs). Transmission electron micrographs exhibited a well-organized SQW structure having abrupt InGaN/GaN heterointerfaces. However, comparison between atomic force microscopy images for GaN-capped and uncapped SQWs indicated areas of InN-rich material, which are about 20 nm in lateral size. The CL images taken at the higher and lower energy side of the spatially integrated CL peak consisted of emissions from complementary real spaces, and the area was smaller than 60 nm in lateral size. ©1997 American Institute of Physics.
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