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Broad wavelength tunability of grating‐coupled external cavity midinfrared semiconductor lasers

 

作者: H. Q. Le,   G. W. Turner,   J. R. Ochoa,   M. J. Manfra,   C. C. Cook,   Y.‐H. Zhang,  

 

期刊: Applied Physics Letters  （AIP Available online 1996）
卷期: Volume 69, issue 19  

页码: 2804-2806

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.116849

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Midinfrared InAs‐based and GaSb‐based semiconductor lasers with wavelengths from 3.3 to 4 &mgr;m have been used in a grating‐tuned external cavity configuration. At 80 K, a tuning range up to ∼8% of the center wavelength has been obtained. Power of 0.2 W peak, 20 mW average has been demonstrated for multimode operation with ∼1–2 nm linewidth. ©1996 American Institute of Physics.

 

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