Optical characterization of GaN films by photoreflectance and photocurrent measurement
作者:
L. H. Qin,
Y. D. Zheng,
D. Feng,
Z. C. Huang,
J. C. Chen,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 12
页码: 7424-7426
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.360400
出版商: AIP
数据来源: AIP
摘要:
We report on the room temperature optical characterization of single crystal hexagonal GaN films on (0001) sapphire grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined to be 3.400 eV by photoreflectance and the possible origin of the photoreflectance signal is discussed. Photocurrent measurement exhibited a peak at 3.351 eV and a continued photoresponse through the ultraviolet region. We found that the intensity of photocurrent was dependent upon the chopper frequency in the measurement. Absorption coefficient and film thickness were obtained from the optical transmission spectra. ©1995 American Institute of Physics.
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