To design a minimum noise figure tunnel diode rf amplifier, the point of minimumI/|Gd| ratio must be known. Also of importance in the design are the diode bias current required at this point of minimumI/|Gd| ratio and the conductance obtained at this bias point. Described in this paper is a scheme whereby X‐Y recordings of theI‐V, G‐V, andI/G‐Vcurves for a tunnel diode can be obtained.